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FGA180N30D 300V PDP IGBT
June 2006
FGA180N30D
300V PDP IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat), Typ = 1.1 V@ IC = 40A * High Input Impedance
Description
Employing Unified IGBT Technology, FGA180N30D provides low conduction and switching loss. FGA180N30D offers the optimum solution for PDP applications where low condution loss is essential.
C
G
TO-3P
GCE
E
Absolute Maximum Rating TC = 25oC unless otherwise noted
Symbol
VCES VGES IC ICM IF IFM PD TJ Tstg TL
Notes:
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current
(Note 1)
FGA180N30D
300 30 @ TC = 25C @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C 180 450 10 40 480 192 -55 to +150 300 300
Units
V V A A A A W W C C C
Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
(1) Repetitive test , pulse width = 100usec , Duty = 0.5 * Ic_pulse limited by max Tj
Thermal Characteristics
Symbol
RJC RJC RJA
Parameter
Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
0.26 1.56 40
Units
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FGA180N30D Rev. A
FGA180N30D 300V PDP IGBT
Package Marking and Ordering Information
Device Marking
FGA180N30D
Device
FGA180N30D
Package
TO-3P
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250A VGE = 0V, IC = 250A VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.6 ---
--100 250
V V/C A nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 250uA, VCE = VGE IC = 40A, VGE = 15V IC = 180A, VGE = 15V, TC = 25C IC = 180A, VGE = 15V, TC = 125C Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3420 520 150 ---pF pF pF 2.5 ---4.0 1.1 1.9 2.0 5.0 1.4 --V V V V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200V, IC = 40A, VGE = 15V VCC = 200V, IC = 40A, RG = 5, VGE = 15V, Resistive Load, TC = 125C VCC = 200V, IC = 40A, RG = 5, VGE = 15V, Resistive Load, TC = 25C -----------------30 210 100 140 0.26 0.75 1.01 30 230 110 220 0.27 1.0 1.27 185 24 88 ---300 ----------277 36 132 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
2 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
Electrical Characteristics of DIODE TC = 25C unless otherwise noted
Symbol
VFM trr Irr Qrr
Parameter
Diode Forward Voltage IF = 10A
Test Conditions
TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C
Min.
---------
Typ.
1.1 0.9 21 35 2.8 5.6 29.4 98
Max.
1.4 --------
Units
V
Diode Reverse Recovery Time
IF = 10A dI/dt = 200A/s
ns
Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
A
nC
3 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
300
Figure 2. Typical Output Characteristics
300 T C = 125 C 250
o
T C = 25 C
250
o
20V 15V 12V 10V
20V 15V 12V 10V
Collector Current, IC [A]
Collector Current, IC [A]
200
200
150
150
100 V G E = 8V 50
100
V GE = 8V
50
0 0 2 4 6
0 0 2 4 6
C ollector-Em itter Voltage, V C E [V]
Collector-Emitter Voltage, V CE [V]
Figure 3. Saturation Voltage
180 C om m on Em itter V G E = 15V 150 T C = 125 C 120
o
Figure 4. Transfer Characteristics
Com m on Em itter V GE = 15V
Collector Current, IC [A]
Collector Current, IC [A]
TC =
25 C
o
100
TC =
25 C
o
o
T C = 125 C
90
10
60
30
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
1 4 6 8 10
C ollector-Em itter Voltage, V C E [V]
Gate-Emitter Voltage, V G E [V]
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0
Figure 6. Saturation Voltage vs.VGE
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Com m on Em itter V GE = 15V
C om m on E m itter o T C = 25 C 5
2.5 180A 2.0
4 180A 90A 2 40A I C = 20A
1.5
90A 40A
3
1.0 IC = 20A
0.5
1
0.0 25 50 75
o
0
100 125
0
4
8
12
16
20
Case Temperature, T C [ C ]
G a te-E m itte r V o ltag e , V G E [V ]
4 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs.VGE
6
(Continued)
Figure 8. Capacitance Characteristics
8000 C om m on Em itter V G E = 0V, f = 1M H z 6000 C ies T C = 25 C
o
Collector-Emitter Voltage, VCE [V]
C om m on Em itter o T C = 125 C 5
4
Capacitance [pF]
C oes 4000
3 180A 2 90A 40A 1 I C = 20A 0 0 4 8 12 16 20
C res 2000
0 0.1 1 10 30
G ate-Em itter Voltage, V G E [V]
C ollector-Em itter Voltage, V CE [V]
Figure 9. Gate Charge Characteristics
15 14 C om m on Em itter R L = 5
Figure 10. SOA Characteristics
600 Ic MAX (Pulsed) 100 Ic MAX (Continuous) 100s 1ms 10 DC Operation 1 50s
Gate-Emitter Voltage, VGE [V]
10 8 6 4 2 0 0 50 100 150 200 250 Vcc = 200V
Collector Current, Ic [A]
12
T C = 25 C
o
0.1
0.01 0.1
Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000
G ate Charge, Q g [nC ]
Collector - Emitter Voltage, V CE [V]
Figure 11. Turn-On Characteristics vs. Gate Resistance
1000
2000 1000
Figure 12. Turn Off Characteristics vs. Gate Resistance
Td(off)
tr
Switching Time [ns]
100
Switching Time [ns]
tf 100
Td(on) Com m on Em itter V CC = 200V, V GE = 15V I C = 40A T C = 25 C T C = 125 C 10 0 10 20 30 40 50
o o
Comm on Emitter V CC = 200V, V GE = 15V I C = 40A T C = 25 C 10 0 T C = 125 C 10 20 30 40 50
o o
Gate Resistance, R G [ ]
G ate Resistance, R G [ ]
5 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
Com m on Em itter VCC = 200V V G E = 15V, R G = 5 T C = 25 C
o
(Continued)
Figure 14. Turn-Off Characteristics vs. Collector Current
1000 tr
1000
Switching Time [ns]
Switching Time [ns]
T C = 125 C
o
tf
100 Td(off) Com m on Em itter V CC = 200V V G E = 15V, R G = 5 T C = 25 C T C = 125 C
o o
100 Td(on)
10 0 20 40 60 80 100 120 140 160 180
10 0 20 40 60 80 100 120 140 160 180
C ollector C urrent, I C [A ]
C ollector C urrent, I C [A ]
Figure 15. Switching Loss vs Gate Resistance
Figure 16. Switching Loss vs Collector Current
E off 1
10
Switching Loss [mJ]
E on
Switching Loss [mJ]
E off
1 C om m on E m itter V C C = 200V V G E = 15V , R G = 5 T C = 25 C T C = 125 C 0.1
o o
C om m on E m itter V C C = 200V , V GE = 15V I C = 40A T C = 25 C T C = 125 C 0.1 0 10 20 30 40 50
o o
E on
0
20
40
60
80
100
120
140
160
180
G ate R esistance, R G [ ]
C o lle cto r C u rre n t, I C [A ]
Figure 17. Turn Off SOA Characteristics
1000
Collector Current, IC [A]
100
10
1 1
Safe O perating Area o V GE = 20V, T C = 100 C 10 100 500
Collector-Emitter Voltage, V CE [V]
6 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
Typical Performance Characteristics
(Continued)
Figure 18. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.1
0.5 0.2 0.1
0.01
0.05 0.02 0.01 single pulse
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Recovery Current
5 Reverse Recovery Current , Irr [A] I F = 10A 4 T C = 25 C
o
100 T J = 125 C
o
Forward Current , IF [A]
10
T J = 25 C
o
3
2
1
1
T C = 25 C 0.1 0.0 0.5 1.0 1.5 T C = 125 C 2.0 2.5
o
o
0 100 di/dt [A/s]
500
Forw ard Voltage , V F [V]
Figure 21. Typical Reverse Recovery Time
36 IF = 10A Reverse Recovery Time , trr [ns] Tc = 25 C 32
o
28
24 100 di/dt [A/s]
500
7 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
TO-3PCapacitance CharacteristicsTurn-On Characteristics vs. Gate
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
8 FGA180N30D Rev. A
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FGA180N30D 300V PDP IGBT
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I19
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
9 FGA180N30D Rev. A
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